This new technology incorporates a high-k dielectric, which reduces leakage and improves the dielectric constant. To help with fermi-level pinning and to allow ...

Nov 8, 2022 · SK hynix has dramatically improved transistor performance effective even at low power settings. This article will examine what HKMG is, ...

Duration: 1:13:18
Posted: Jul 18, 2023

The gate dielectric is a very thin insulation layer, traditionally made of silicon dioxide, that lies between the transistor's metal gate electrode and the ...

Dec 8, 2009 · HKMG is an emerging technology that allows the continuation of Moore's Law, enabling faster switching speed while reducing device power ...

The HKMG process, now introduced by the Graphenea Foundry, simultaneously resolves both gate leakage and individual addressing of GFETs, enabling further ...

Jul 2, 2014 · In this paper, a low-cost and low-leakage gate-first high-k metal-gate CMOS integration compatible with the high thermal budget used in a 2× ...

Apr 2, 2015 · Atomic layer deposition technique was applied to fill the gate trench with W using WF6 and B2H6 precursors. By such an ALD approach, decent ...